unit: mm bcv 61 features high current gain low c ollect or-e m itt er saturation voltage absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-ba se voltage v cbo 30 v collector-emit ter voltage v ceo 30 v em itt er-b ase voltage v ebo 6 v collector current i c 100 m a pow er dissi pation p d 250 m w thermal resist ance from junct ion to am bient r ja 500 /w oper ating and storage and tem pera ture rang e t j , t stg -55 to +150 21 34 tr1 tr2 1 smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
s m d ty p e el ectrical characteristics t a = 2 5 parameter sym bol test c onditions min typ ma x unit collector-base breakdow n voltage v (br)cbo i c = 10 a, i e = 0 30 v collector-em itt er breakdow n voltage v (br)ceo i c = 10 m a, i b = 0 30 v em itt er- base b reakdow n voltage v (br)ebo i c = 10 a, i c = 0 6 v collector cutof f c urr ent i cbo v cb =30v, i e =0 15 na em itt er cutoff c urr ent i ebo v eb =5v, i c =0 100 na v ce =5v, i c = 100a 100 v ce =5v, i c = 2m a 110 800 i c = 10 m a; i b = 0.5 m a 0.25 v i c = 100 m a; i b = 5 m a 0.6 v i c = 10 m a; i b = 0.5 m a 0.7 v i c = 100 m a; i b = 5 m a 0.9 v collector capacit ance c c i e = i e = 0; v cb = 10 v; f = 1 mhz 2.5 pf transition frequen cy f t i c = 20 m a; v ce = 20 v; f = 100 m hz 100 mh z noise figure f i c =200 a; v ce =5 v; r s =2k ; f = 1 khz; b = 200 hz 10 db v cb = 0; i e = -250 m a -1.8 v v cb = 0; i e -400 m v dc curre nt gain bcv61a 110 220 bcv61b 200 450 BCV61C 420 800 * pulse t est: puls e w idth 300s, duty cy cle 2.0%. h fe i c = 2 m a; v ce = 5 v transistor tr1 transistor tr2 base-em itt er forw ard v oltage v ebs h fe dc curre nt gain collect or- em itt er saturation voltage * v ce(sat) v be(sat) base-emit ter saturation voltage * mark ing typ e bcv61 bcv61a bcv61b BCV61C ma rking 1m p 1jp 1kp 1lp t r a n s i s t o r s = -10a bcv 61 smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
s m d ty p e fig.1 maximum collector-emitter voltage as a function of emitter resistance. handbook, full pagewidth 0 30 10 20 10 - 1 1 v ce1max (v) 10 r e ( w ) 10 2 i e2 = 1 ma 5 ma 10 ma 50 ma (see fig.3). i c1 i e2 ------- - 1.3 = t y pical ch aracteristics t r a n s i s t o r s bcv 61 smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
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